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Principal HBM Design Architect

Micron Technology · Folsom, United States

Information Technology Infrastructure & Support Full-time Posted 5 days ago

About this role

Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Member of Technical Staff HBM Design Architect, you will be responsible for design and development of high-speed interface between DRAM and Base die in HBM cube! This includes designing the DRAM command and control logic, as well serializing and de-serializing scheme

You will collaborate with a highly creative and motivated development team applying brand-new memory technologies to build groundbreaking HBM products! Responsibilities: Responsible for the high-speed DRAM and Base die interface in HBM cube. Design the DRAM command and control logic, as well as serializing and de-serializing scheme at the interface. Conduct circuit simulations using standard industry simulators such as FINESIM, HSPICE and VERILOG Collaborate with data path design on floor planning and full chip testbench

Analyze timing/area/power in high-speed DRAM or mixed-signal design. Contribute to the development of new HBM product opportunities by assisting with the overall design, layout, and optimization of Memory, Logic, and Analog circuits. Qualifications: Extensive experience with DRAM operation and JEDEC specifications across DDR, LPDDR, GDDR, and HBM product families

Strong technical expertise in analog and mixed-signal circuit design. Hands-on proficiency in DRAM command decoding, bank logic, and RAS/CAS chain design. Demonstrated innovation and problem‑solving capabilities in high‑performance memory development

Excellent analytical, communication, and collaboration skills with the ability to clearly convey complex technical concepts. Preferred Qualifications: 10+ years of proven memory‑industry experience with an MS degree, or 15+ years with a BS degree (or equivalent). Track record

Apply for this role on Micron Technology’s official careers site.

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