DRAM Senior Security Architect
Samsung Β· SSIR, Goldstone, India
About this role
Position Summary About Samsung Semiconductor India Research (SSIR) Samsung Semiconductor India Research; Bangalore (SSIR) is largest overseas research & development centers for Samsung Semiconductor. SSIR is organized into verticals aligned with the business divisions of Samsung Semiconductor, which includes System LSI, Memory. Memory business is one of the flagship and most profitable businesses within Samsung Semiconductor
Memory business boasts of being the world first in many technology & product areas. The Memory division at SSIR (MST) is a key partner for Samsung Korea R&D and has critical responsibilities for many products being developed within Samsung Memory business. The MST Software team works on firmware development for Flash based products (Solid State Drives, UFS, eMMC, MicroSD) and Client Software to enable Samsung products in market
In addition, this team is also responsible for research on new storage technologies and bringing new concepts to memory products. Teams in India, Korea and US work together to achieve overall Memory business goals. We explore new technologies in a broad spectrum of areas ranging from emerging Non-Volatile Memory (Storage Class Memories), Low-Latency System designs, Interface protocols and standards, Device Drivers & OS components, Open Ecosystem & Platforms
Role and Responsibilities We are seeking a Security Architect to define and drive the end-to-end security architecture for next-generation memory devices based on CXL (CMM-D) and future Processing-Near-Memory (PNM) capabilities. The role spans hardware, firmware and lifecycle security, including Root of Trust, secure boot, attestation, confidential computing enablement and runtime protection. This is a senior individual contributor role with strong cross-functional impact across silicon, firmware, and platform teams
Experience β {8 β 14 } years of experience Firmware Development Skills Required Architect device-level security framework for CXL memory products Β· Def
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